SML5020BN Datasheet | Seme LAB

TO247- AD Package Outline. Dimensions in mm (inches) 4.69 5.31 1.49 2.49 (0.185) (0.209) (0.059) (0.098) 6.15 (0.242) BSC 15.49 (0.610) 16.26 (0.640) SEME 4TH GENERATION MOSFET N- CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS 20.80 (0.819) 21.46 (0.845) 3.55 (0.140) 3.81 (0.150) 4.50 (0.177) M ax. 1.65 (0.065) 2.13 (0.084) 2.87 (0.113) 3.12 (0.123) 0.40 (0.016) 0.79 (0.031) 1.01 (0.040) 1.40 (0.055) 2.21 (0.087) 2.59 (0.102) 5.25 (0.215) BSC VDSS ID(cont) RDS(on) 500V 28.0A 0.20W Pin 1 - Gate Pin 2 - Drain 19.81 (0.780) 20.32 (0.800) Pin 3 - Source ABSOLUTE MAXIMUM RATINGS (Tcase = 25°C unless otherwise stated) VDSS ID IDM VGS PD TJ , TSTG TL Drain - Source Voltage Continuous Drain Current Pulsed Drain Current 1 Gate - Source Voltage Total Power Dissipation @ Tcase = 25°C Derate Linearly Operating and Storage Junction Temperature Range Lead Temperature : 0.063” from Case for 10 Sec. 500 28 112 ±30 360 2.9 - 55 to 150 300 V A A V W W/°C °C STATIC ELECTRICAL RATINGS (Tcase = 25°C unless otherwise stated) Characteristic BVDSS IDSS IGSS VGS(TH) ID(ON) RDS(ON) Drain - Source Breakdown Voltage Zero Gate Voltage Drain Current (VGS = 0V) Gate - Source Leakage Current Gate Threshold Voltage On State Drain Current 2 Drain - Source On State Resistance 2 Test Conditions VGS = 0V , ID = 250m A VDS = VDSS VDS = 0.8VDSS , TC = 125°C VGS = ±30V , VDS = 0V VDS = VGS , ID = 1.0m A VDS > ID(ON) x RDS(ON) Max VGS = 10V VGS = 10V , ID = 0.5 ID [Cont.] 2 28 0.20 Min. 500 Typ. Max. Unit V 250 1000 ±100 4 m A n A V A 1) Repetitive Rating: Pulse Width limited by maximum junction temperature. 2) Pulse Test: Pulse Width < 380m S , Duty Cycle < 2% Semelab...