SML50A15 Datasheet | Seme LAB

TO- 3 Package Outline. Dimensions in mm (inches) 25.15 (0.99) 26.67 (1.05) 10.67 (0.42) 11.18 (0.44) 1.52 (0.06) 3.43 (0.135) 6.35 (0.25) 9.15 (0.36) N- CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS 1.47 (0.058) 1.60 (0.063) 3 (case) 3.84 (0.151) 4.09 (0.161) 7.92 (0.312) 12.70 (0.50) VDSS 500V 14.7A ID(cont) RDS(on) 0.300Ω - Faster Switching - Lower Leakage - TO- 3 Hermetic Package 38.61 (1.52) 39.12 (1.54) 29.9 (1.177) 30.4 (1.197) Pin 1 - Gate 16.64 (0.655) 17.15 (0.675) Pin 2 - Source Case - Drain 22.23 (0.875) max. Star MOS is a new generation of high voltage N- Channel enhancement mode power MOSFETs. This new technology minimises the JFET effect, increases packing density and reduces the on-resistance. Star MOS also achieves faster switching speeds through optimised gate layout. ABSOLUTE MAXIMUM RATINGS (Tcase = 25°C unless otherwise stated) VDSS ID IDM VGS VGSM PD TJ , TSTG TL IAR EAR EAS Drain - Source Voltage Continuous Drain Current Pulsed Drain Current 1 Gate - Source Voltage Gate - Source Voltage Transient Total Power Dissipation @ Tcase = 25°C Derate Linearly Operating and Storage Junction Temperature Range Lead Temperature : 0.063” from Case for 10 Sec. Avalanche Current1 (Repetitive and Non-Repetitive) Repetitive Avalanche Energy 1 Single Pulse Avalanche Energy 500 14.7 58.8 ±30 ±40 155 1.24 - 55 to 150 300 14.7 30 960 V A A V W W/°C °C A m J 1) Repetitive Rating: Pulse Width limited by maximum junction temperature. 2) Starting TJ = 25°C, L = 8.89m H, RG = 25Ω, Peak IL = 14.7A Semelab plc. Telephone +44(0)1455 556565. Fax +44(0)1455 552612. Website: http://.semelab.co.uk E-mail: sales@semelab.co.uk 6/99 STATIC ELECTRICAL RATINGS (Tcase = 25°C unless otherwise...