Datasheet4U Logo Datasheet4U.com

SML50B26 - N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS

📥 Download Datasheet

Datasheet Details

Part number SML50B26
Manufacturer Seme LAB
File Size 21.14 KB
Description N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS
Datasheet download datasheet SML50B26 Datasheet

📁 Similar Datasheet

Part Number Description Manufacturer
SML500UF15D Ultra Fast Recovery TO254 Hermetic Diodes Semelab
SML500UF25D Ultra Fast Recovery TO254 Hermetic Diodes Semelab
SML512 LOW CURRENT TY PE MINI MOLDED CHIP LEDS Rohm
SML512BC4T LOW CURRENT TY PE MINI MOLDED CHIP LEDS Rohm
SML522BU1W LED ROHM

Other Datasheets by Seme LAB

Part Number Description
SML50B26F N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER FREDFET
SML50B20 N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS
SML50B22 N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS
SML50B30 N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS
SML5020BN 4TH GENERATION MOSFET

Full PDF Text Transcription

Click to expand full text
SML50B26 TO–247AD Package Outline. Dimensions in mm (inches) 4.69 5.31 1.49 2.49 (0.185) (0.209) (0.059) (0.098) 6.15 (0.242) BSC 15.49 (0.610) 16.26 (0.640) 20.80 (0.819) 21.46 (0.845) N–CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS 3.55 (0.140) 3.81 (0.150) 1 2 3 1.65 (0.065) 2.13 (0.084) 2.87 (0.113) 3.12 (0.123) 0.40 (0.016) 0.79 (0.031) 1.01 (0.040) 1.40 (0.055) VDSS 500V 26A ID(cont) RDS(on) 0.200W • • • • Faster Switching Lower Leakage 100% Avalanche Tested Popular TO–247 Package 2.21 (0.087) 2.59 (0.102) 19.81 (0.780) 20.32 (0.800) 4.50 (0.177) M ax. 5.25 (0.215) BSC Pin 1 – Gate Pin 2 – Drain Pin 3 – Source D G S StarMOS is a new generation of high voltage N–Channel enhancement mode power MOSFETs.
Published: |