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SML80A12 - N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS

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Part number SML80A12
Manufacturer Seme LAB
File Size 20.76 KB
Description N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS
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SML80A12 TO–3 Package Outline. Dimensions in mm (inches) 25.15 (0.99) 26.67 (1.05) 10.67 (0.42) 11.18 (0.44) 1.52 (0.06) 3.43 (0.135) 6.35 (0.25) 9.15 (0.36) N–CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS 1.47 (0.058) 1.60 (0.063) 1 2 3 (case) 3.84 (0.151) 4.09 (0.161) 7.92 (0.312) 12.70 (0.50) VDSS 800V 11.5A ID(cont) RDS(on) 0.650Ω • Faster Switching • Lower Leakage • TO–3 Hermetic Package 38.61 (1.52) 39.12 (1.54) 29.9 (1.177) 30.4 (1.197) Pin 1 – Gate 16.64 (0.655) 17.15 (0.675) Pin 2 – Source Case – Drain D 22.23 (0.875) max. G S StarMOS is a new generation of high voltage N–Channel enhancement mode power MOSFETs. This new technology minimises the JFET effect, increases packing density and reduces the on-resistance.
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