SML80B12
SML80B12 is N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS manufactured by Seme LAB.
TO- 247AD Package Outline.
Dimensions in mm (inches)
4.69 5.31 1.49 2.49 (0.185) (0.209) (0.059) (0.098) 6.15 (0.242) BSC 15.49 (0.610) 16.26 (0.640)
20.80 (0.819) 21.46 (0.845)
N- CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS
3.55 (0.140) 3.81 (0.150)
1.65 (0.065) 2.13 (0.084) 2.87 (0.113) 3.12 (0.123)
0.40 (0.016) 0.79 (0.031)
1.01 (0.040) 1.40 (0.055)
VDSS 800V 12A ID(cont) RDS(on) 0.750W
- -
- - Faster Switching Lower Leakage 100% Avalanche Tested Popular TO- 247 Package
2.21 (0.087) 2.59 (0.102)
19.81 (0.780) 20.32 (0.800)
4.50 (0.177) M ax.
5.25 (0.215) BSC
Pin 1
- Gate
Pin 2
- Drain
Pin 3
- Source
Star MOS is a new generation of high voltage N- Channel enhancement mode power MOSFETs. This new technology minimises the JFET effect, increases packing density and reduces the on-resistance. Star MOS also achieves faster switching speeds through optimised gate layout.
ABSOLUTE MAXIMUM RATINGS (Tcase = 25°C unless otherwise stated)
VDSS ID IDM VGS VGSM PD TJ , TSTG TL IAR EAR EAS Drain
- Source Voltage Continuous Drain Current Pulsed Drain Current 1 Gate
- Source Voltage Gate
- Source Voltage Transient Total Power Dissipation @ Tcase = 25°C Derate Linearly Operating and Storage Junction Temperature Range Lead Temperature : 0.063” from Case for 10 Sec. Avalanche Current1 (Repetitive and Non-Repetitive) Repetitive Avalanche Energy 1 Single Pulse Avalanche Energy
800 12 48 ±30 ±40 260 2.08
- 55 to 150 300 12 30 960
V A A V W W/°C °C A m J
1) Repetitive Rating: Pulse Width limited by maximum junction temperature. 2) Starting TJ = 25°C, L = 13.33m H, RG = 25W, Peak IL = 12A
Semelab plc.
Telephone +44(0)1455 556565. Fax +44(0)1455 552612. Website: http://.semelab.co.uk E-mail: sales@semelab.co.uk
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