Semelab 2N2405
MEDIUM POWER SILICON NPN PLANAR TRANSISTOR
MECHANICAL DATA
Dimensions in mm (inches) 8.89 (0.35) 9.40 (0.37) MEDIUM POWER SILICON NPN PLANAR TRANSISTOR 7.75 (0.305) 8.51 (0.335) 4.19 (0.165) 4.95 (0.195)FEATURES
0.89 max. (0.035) 7.75 (0.305) 8.51 (0.335) dia.● For Operation at Junction Temperature up to 200°C
● Planar Construction for Low Noise and Low Leakage 5.08 (0.200) typ. 12.70 (0.500) min.
● Low Output Capacitance 2.54 (0.100) 2 1 0.66 (0.026) 1.14 (0.045) 0.71 (0.028) 0.86 (0.034) 3 45˚ TO39 PACKAGE Underside View Pin 1 = Emitter Pin 2 = Base Pin 3 = Collector
ABSOLUTE MAXIMUM RATINGS
(Tcase = 25°C unless otherwise stated) VCBO VCEO VEBO VCER IC PT Tstg,Tj Rjc Rja Collector – Base Voltage Collector – Emitter Voltage Emitter – Base Voltage Collector – Emitter Sustaining Voltage Collector Current Total Device Dissipation @ TC up to 25°C Free Air Temperatures up to 25°C Storage and Operatuing Junction Temperature Thermal Resistance Junction to Case Thermal Resistance Junction to Ambient 120V 90V 7V 140V 1A 5W 1W –65 to 200°C 35°C / W 175°C / W Semelab plc.