HCS60R180E - 600V N-Channel Super Junction MOSFET

SemiHow

Key Features

Very Low FOM (RDS(on) X Qg) Extremely low switching loss Excellent stability and uniformity 100% Avalanche Tested Key Parameters Parameter BVDSS @Tj,max ID RDS(on), max Qg, Typ Value 650 20 0.18 22 Unit V A ȍ nC.

HCS60R180E 600v n-channel super junction mosfet by SemiHow - Datasheet Preview

Datasheet Details

Part number	HCS60R180E
Manufacturer	SemiHow
File Size	218.09 KB
Description	600V N-Channel Super Junction MOSFET
Datasheet	HCS60R180E Datasheet

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HCS60R180E Super Junction MOSFET Mar 2016 HCS60R180E 600V N-Channel Super Junction MOSFET Features Very Low FOM (RDS(on) X Qg) Extremely low switching loss Excellent stability and uniformity 100% Avalanche Tested Key Parameters Parameter BVDSS @Tj,max ID RDS(on), max Qg, Typ Value 650 20 0.