SemiHow HCS60R180E
600V N-Channel Super Junction MOSFET
| Part No. | HCS60R180E |
|---|---|
| Datasheet | HCS60R180E Download |
| Manufacturer |  SemiHow |
| Description | 600V N-Channel Super Junction MOSFET |
| Buy | Stock & Price |
FEATURES
Very Low FOM (RDS(on) X Qg) Extremely low switching loss Excellent stability and uniformity 100% Avalanche TestedKEY PARAMETERS
Parameter BVDSS @Tj,max ID RDS(on), max Qg, Typ Value 650 20 0.18 22 Unit V A ȍ nC Application Telecom Power equipment / Server station Uninterruptible Power Supply (UPS) Power Factor Correction (PFC) TV power & LED Lighting Power Package & Internal Circuit TO-220F G D SABSOLUTE MAXIMUM RATINGS
TC=25 unless otherwise specified Symbol Parameter Value VDSS VGS ID IDM EAS dv/dt dv/dt PD TJ, TSTG TL Drain-Source Voltage Gate-Source Voltage Drain Current Drain Current Drain Current – Continuous (TC = 25) – Continuous (TC = 100) – Pulsed (Note 1) Single Pulsed Avalanche Energy (Note 2) MOSFET dv/dt ruggedness, VDS=0…480V Reverse diode dv/dt, VDS=0…480V, IDSID Power Dissipation Operating and Storage
