Datasheet Summary
HFH10N90Z_HFA10N90Z
Oct 2016
HFH10N90Z / HFA10N90Z
900V N-Channel MOSFET
Features
Superior Avalanche Rugged Technology Robust Gate Oxide Technology Very Low Intrinsic Capacitances Excellent Switching Characteristics 100% Avalanche Tested RoHS pliant Built-in ESD Diode
Key Parameters
Parameter BVDSS ID
RDS(on), Typ Qg, Typ
Value 900 10 1.0 72
HFH10N90Z TO-3P
HFA10N90Z TO-247
Symbol
Unit V A ȍ...