SemiHow HFA20N50U
500V N-Channel MOSFET
| Part No. | HFA20N50U |
|---|---|
| Datasheet | HFA20N50U Download |
| Manufacturer |  SemiHow |
| Description | 500V N-Channel MOSFET |
| Buy | Stock & Price |
FEATURES
Originative New Design Superior Avalanche Rugged Technology Robust Gate Oxide Technology Very Low Intrinsic Capacitances Excellent Switching Characteristics Unrivalled Gate Charge : 58 nC (Typ.) Extended Safe Operating Area Lower RDS(ON) ȍ 7\S #9GS=10V 100% Avalanche Tested May 2014 BVDSS = 500 V RDS(on) typ ȍ ID = 20 A TO-247 12 3 1.Gate 2. Drain 3. SourceABSOLUTE MAXIMUM RATINGS
TC=25 unless otherwise specified Symbol Parameter Value VDSS ID IDM VGS EAS IAR EAR dv/dt Drain-Source Voltage Drain Current Drain Current Drain Current – Continuous (TC = 25) – Continuous (TC = 100) – Pulsed (Note 1) Gate-Source Voltage Single Pulsed Avalanche Energy (Note 2) Avalanche Current (Note 1) Repetitive Avalanche Energy (Note 1) Peak Diode Recovery dv/dt (Note 3) 500 20 12.5 80 ρ30 950 20 10 4.5 PD Power Dissipation (TC = 25) - Derate above 25 100 0.8 TJ, TSTG TL Operating and Storage Temperature Range Maximum lead temperature for soldering purposes, 1/8” from case for 5 seconds -55 to +150 300 Thermal Resistance Characteristics Symbol RșJC RșJA Junction-to-Case Parameter Junction-to-Ambient Typ. -- -- Max.
