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HFA24N50G
July 2015
HFA24N50G
500V N-Channel MOSFET
BVDSS = 500 V RDS(on) typ ȍ ID = 24 A
FEATURES
Originative New Design Superior Avalanche Rugged Technology Robust Gate Oxide Technology Very Low Intrinsic Capacitances Excellent Switching Characteristics Unrivalled Gate Charge : 110 nC (Typ.) Extended Safe Operating Area Lower RDS(ON) ȍ7S#9GS=10V 100% Avalanche Tested
TO-247
12 3
1.Gate 2. Drain 3.