HFC2N60U - 600V N-Channel MOSFET

SemiHow

Key Features

Originative New Design Superior Avalanche Rugged Technology Robust Gate Oxide Technology Very Low Intrinsic Capacitances Excellent Switching Characteristics Unrivalled Gate Charge : 5.5 nC (Typ. ) Extended Safe Operating Area Lower RDS(ON) : 4 ȍ7S#9GS=10V 100% Avalanche Tested November 2014 BVDSS = 600 V RDS(on) typ = ȍ ID = 2 A TO-126 1 23 1.Gate 2. Drain 3. Source Absolute Maximum Ratings TC=25୅ unless otherwise specified Symbol Parameter Value VDSS ID IDM VGS EAS.

HFC2N60U 600v n-channel mosfet by SemiHow - Datasheet Preview

Datasheet Details

Part number	HFC2N60U
Manufacturer	SemiHow
File Size	177.42 KB
Description	600V N-Channel MOSFET
Datasheet	HFC2N60U Datasheet

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HFC2N60U HFC2N60U 600V N-Channel MOSFET FEATURES Originative New Design Superior Avalanche Rugged Technology Robust Gate Oxide Technology Very Low Intrinsic Capacitances Excellent Switching Characteristics Unrivalled Gate Charge : 5.5 nC (Typ.) Extended Safe Operating Area Lower RDS(ON) : 4 ȍ7S#9GS=10V 100% Avalanche Tested November 2014 BVDSS = 600 V RDS(on) typ = ȍ ID = 2 A TO-126 1 23 1.Gate 2. Drain 3.