SemiHow HFD1N65S
N-Channel MOSFET
| Part No. | HFD1N65S |
|---|---|
| Datasheet | HFD1N65S Download |
| Manufacturer |  SemiHow |
| Description | N-Channel MOSFET |
| Buy | Stock & Price |
FEATURES
● Originative New Design● Superior Avalanche Rugged Technology
● Robust Gate Oxide Technology
● Very Low Intrinsic Capacitances
● Excellent Switching Characteristics
● Unrivalled Gate Charge : 3.0 nC (Typ.)
● Extended Safe Operating Area
● Lower RDS(ON) : 10.5 Ω (Typ.) @VGS=10V April 2009 BVDSS = 650 V RDS(on) typ = 10.5 Ω ID = 0.9 A D-PAK I-PAK 2 1 3 HFD1N65S 1 2 3 HFU1N65S 1.Gate 2. Drain 3. Source D G S
ABSOLUTE MAXIMUM RATINGS
TC=25℃ unless otherwise specified Symbol Parameter Value VDSS ID IDM VGS EAS IAR EAR dv/dt Drain-Source Voltage Drain Current Drain Current Drain Current – Continuous (TC = 25℃) – Continuous (TC = 100℃) – Pulsed (Note 1) Gate-Source Voltage Single Pulsed Avalanche Energy (Note 2) Avalanche Current (Note 1) Repetitive Avalanche Energy (Note 1) Peak Diode Recovery dv/dt (Note 3) 650 0.9 0.57 3.6 ±30 26 0.9 2.8 4.5 PD TJ, TSTG TL Power Dissipation (TA = 25℃) * Power Dissipation (TC = 25℃) - Derate above 25℃ Operating and Storage Temperature Range Maxim...
