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HFD1N65 - N-Channel MOSFET

Key Features

  •  Originative New Design  Superior Avalanche Rugged Technology  Robust Gate Oxide Technology  Very Low Intrinsic Capacitances  Excellent Switching Characteristics  Unrivalled Gate Charge : 4.0 nC (Typ. )  Extended Safe Operating Area  Lower RDS(ON) : 10.5 Ω (Typ. ) @VGS=10V  100% Avalanche Tested D-PAK I-PAK 2 1 3 HFD1N65 1 2 3 HFU1N65 1.Gate 2. Drain 3. Source D G S Absolute Maximum Ratings TC=25℃ unless otherwise specified Symbol Parameter Value VDSS ID IDM VGS EAS IAR EAR dv.

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Datasheet Details

Part number HFD1N65
Manufacturer SemiHow
File Size 319.60 KB
Description N-Channel MOSFET
Datasheet download datasheet HFD1N65 Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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HFD1N65 / HFU1N65 April 2006 HFD1N65 / HFU1N65 650V N-Channel MOSFET BVDSS = 650 V RDS(on) typ = 10.5 Ω ID = 0.8 A FEATURES  Originative New Design  Superior Avalanche Rugged Technology  Robust Gate Oxide Technology  Very Low Intrinsic Capacitances  Excellent Switching Characteristics  Unrivalled Gate Charge : 4.0 nC (Typ.)  Extended Safe Operating Area  Lower RDS(ON) : 10.5 Ω (Typ.) @VGS=10V  100% Avalanche Tested D-PAK I-PAK 2 1 3 HFD1N65 1 2 3 HFU1N65 1.Gate 2. Drain 3.