SemiHow HFD1N60
N-Channel MOSFET
| Part No. | HFD1N60 |
|---|---|
| Datasheet | HFD1N60 Download |
| Manufacturer |  SemiHow |
| Description | N-Channel MOSFET |
| Buy | Stock & Price |
FEATURES
Originative New Design Superior Avalanche Rugged Technology Robust Gate Oxide Technology Very Low Intrinsic Capacitances Excellent Switching Characteristics Unrivalled Gate Charge : 4.0 nC (Typ.) Extended Safe Operating Area Lower RDS(ON) ȍ 7\S #9GS=10V 100% Avalanche Tested D-PAK I-PAK 2 1 3 HFD1N60 1 2 3 HFU1N60 1.Gate 2. Drain 3. SourceABSOLUTE MAXIMUM RATINGS
TC=25 unless otherwise specified Symbol Parameter Value VDSS ID IDM VGS EAS IAR EAR dv/dt Drain-Source Voltage Drain Current Drain Current Drain Current – Continuous (TC = 25ఁ͚͑ – Continuous (TC = 100ఁ͚͑ – Pulsed (Note 1) Gate-Source Voltage Single Pulsed Avalanche Energy (Note 2) Avalanche Current (Note 1) Repetitive Avalanche Energy (Note 1) Peak Diode Recovery dv/dt (Note 3) 600 0.9 0.57 3.6 ρ30 50 0.9 3.1 5.5 PD TJ, TSTG TL Power Dissipation (TA = 25ఁ) * Power Dissipation (TC = 25ఁ͚͑ ͑͑͑͑͑͑͑͑͑͑͑͑͑͑͑͑͑͑͑͑͑͑͑͑͑͑͑͑͞͵ΖΣΒΥΖ͑ΒΓΠΧΖ͑ͣͦఁ͑ Operating and Storage Temperature Range Maximum lead temperature...
