Datasheet4U Logo Datasheet4U.com

HFD1N60S - N-Channel MOSFET

Key Features

  •  Originative New Design  Superior Avalanche Rugged Technology  Robust Gate Oxide Technology  Very Low Intrinsic Capacitances  Excellent Switching Characteristics  Unrivalled Gate Charge : 3.0 nC (Typ. )  Extended Safe Operating Area  Lower RDS(ON) : 10 Ω (Typ. ) @VGS=10V  100% Avalanche Tested D-PAK I-PAK 2 1 3 HFD1N60S 1 2 3 HFU1N60S 1.Gate 2. Drain 3. Source Absolute Maximum Ratings TC=25℃ unless otherwise specified Symbol Parameter Value VDSS ID IDM VGS EAS IAR EAR dv/dt Drai.

📥 Download Datasheet

Datasheet Details

Part number HFD1N60S
Manufacturer SemiHow
File Size 692.56 KB
Description N-Channel MOSFET
Datasheet download datasheet HFD1N60S Datasheet

📁 Similar Datasheet

Part Number Description Manufacturer
HFD2 SUBMINIATURE DIP RELAY ETC
HFD2 SUMINIATURE DIP RELAY Hongfa
HFD23 RELAY Hongfa Technology
HFD27 Subminiature DIP Relay Hongfa
HFD27-003-H Subminiature DIP Relay Hongfa

Other Datasheets by SemiHow

Part Number Description
HFD1N60 N-Channel MOSFET
HFD1N60F 600V N-Channel MOSFET
HFD1N65 N-Channel MOSFET
HFD1N65S N-Channel MOSFET
HFD1N70 N-Channel MOSFET

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
HFD1N60S / HFU1N60S Sep 2009 HFD1N60S / HFU1N60S 600V N-Channel MOSFET BVDSS = 600 V RDS(on) typ = 10 Ω ID = 1.0 A FEATURES  Originative New Design  Superior Avalanche Rugged Technology  Robust Gate Oxide Technology  Very Low Intrinsic Capacitances  Excellent Switching Characteristics  Unrivalled Gate Charge : 3.0 nC (Typ.)  Extended Safe Operating Area  Lower RDS(ON) : 10 Ω (Typ.) @VGS=10V  100% Avalanche Tested D-PAK I-PAK 2 1 3 HFD1N60S 1 2 3 HFU1N60S 1.Gate 2. Drain 3.