HFD2N65F - 600V N-Channel MOSFET

SemiHow

Key Features

Originative New Design Superior Avalanche Rugged Technology Robust Gate Oxide Technology Very Low Intrinsic Capacitances Excellent Switching Characteristics Unrivalled Gate Charge : 6.5 nC (Typ. ) Extended Safe Operating Area Lower RDS(ON) ȍ7S#9GS=10V 100% Avalanche Tested D-PAK I-PAK 2 1 3 HFD2N65F 1 2 3 HFU2N65F 1.Gate 2. Drain 3. Source Absolute Maximum Ratings TC=25୅ unless otherwise specified Symbol Parameter Value VDSS ID IDM VGS EAS IAR EAR PD Drain-.

HFD2N65F 600v n-channel mosfet by SemiHow - Datasheet Preview

Datasheet Details

Part number	HFD2N65F
Manufacturer	SemiHow
File Size	210.57 KB
Description	600V N-Channel MOSFET
Datasheet	HFD2N65F Datasheet

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Full PDF Text Transcription (Reference)

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HFD2N65F_HFU2N65F July 2015 HFD2N65F / HFU2N65F 600V N-Channel MOSFET BVDSS = 650 V RDS(on) typ ȍ ID = 2 A FEATURES Originative New Design Superior Avalanche Rugged Technology Robust Gate Oxide Technology Very Low Intrinsic Capacitances Excellent Switching Characteristics Unrivalled Gate Charge : 6.5 nC (Typ.) Extended Safe Operating Area Lower RDS(ON) ȍ7S#9GS=10V 100% Avalanche Tested D-PAK I-PAK 2 1 3 HFD2N65F 1 2 3 HFU2N65F 1.Gate 2. Drain 3.