HFD2N65S - N-Channel MOSFET

SemiHow

Key Features

Originative New Design Superior Avalanche Rugged Technology Robust Gate Oxide Technology Very Low Intrinsic Capacitances Excellent Switching Characteristics Unrivalled Gate Charge : 6.0 nC (Typ. ) Extended Safe Operating Area Lower RDS(ON) : 5.0 ȍ (Typ. ) @VGS=10V 100% Avalanche Tested D-PAK I-PAK 2 1 3 HFD2N65S 1 2 3 HFU2N65S 1.Gate 2. Drain 3. Source Absolute Maximum Ratings TC=25୅ unless otherwise specified Symbol Parameter Value VDSS ID IDM VGS EAS IAR EAR dv/dt Dra.

HFD2N65S n-channel mosfet by SemiHow - Datasheet Preview

Datasheet Details

Part number	HFD2N65S
Manufacturer	SemiHow
File Size	260.56 KB
Description	N-Channel MOSFET
Datasheet	HFD2N65S Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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HFD2N65S_HFU2N65S Mar 2010 HFD2N65S / HFU2N65S 650V N-Channel MOSFET BVDSS = 650 V RDS(on) typ = 5.0 ȍ ID = 1.6 A FEATURES Originative New Design Superior Avalanche Rugged Technology Robust Gate Oxide Technology Very Low Intrinsic Capacitances Excellent Switching Characteristics Unrivalled Gate Charge : 6.0 nC (Typ.) Extended Safe Operating Area Lower RDS(ON) : 5.0 ȍ (Typ.) @VGS=10V 100% Avalanche Tested D-PAK I-PAK 2 1 3 HFD2N65S 1 2 3 HFU2N65S 1.Gate 2. Drain 3.