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HFD2N60S - 600V N-Channel MOSFET

Key Features

  • Originative New Design.
  • Superior Avalanche Rugged Technology.
  • Robust Gate Oxide Technology.
  • Very Low Intrinsic Capacitances.
  • Excellent Switching Characteristics.
  • Unrivalled Gate Charge : 6.0 nC (Typ. ).
  • Extended Safe Operating Area.
  • Lower RDS(ON) ȍ 7S #9GS=10V.
  • 100% Avalanche Tested D-PAK I-PAK 2 1 3 HFD2N60S 1 2 3 HFU2N60S 1.Gate 2. Drain 3. Source Absolute Maximum Ratings TC=25୅ unless otherwise specified Symbol Parameter Value VD.

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Datasheet Details

Part number HFD2N60S
Manufacturer SemiHow
File Size 164.30 KB
Description 600V N-Channel MOSFET
Datasheet download datasheet HFD2N60S Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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HFD2N60S_HFU2N60S March 2014 HFD2N60S / HFU2N60S 600V N-Channel MOSFET BVDSS = 600 V RDS(on) typ ȍ ID = 1.9 A FEATURES ƒ Originative New Design ƒ Superior Avalanche Rugged Technology ƒ Robust Gate Oxide Technology ƒ Very Low Intrinsic Capacitances ƒ Excellent Switching Characteristics ƒ Unrivalled Gate Charge : 6.0 nC (Typ.) ƒ Extended Safe Operating Area ƒ Lower RDS(ON) ȍ 7S #9GS=10V ƒ 100% Avalanche Tested D-PAK I-PAK 2 1 3 HFD2N60S 1 2 3 HFU2N60S 1.Gate 2. Drain 3.