HFD5N60U - N-Channel MOSFET

SemiHow

Key Features

Originative New Design Superior Avalanche Rugged Technology Robust Gate Oxide Technology Very Low Intrinsic Capacitances Excellent Switching Characteristics Unrivalled Gate Charge : 10.5 nC (Typ. ) Extended Safe Operating Area Lower RDS(ON) : 2.0 ȍ7S#9GS=10V 100% Avalanche Tested Jan 2014 BVDSS = 600 V RDS(on) typ = 2.0 ȍ ID = 3.6 A D-PAK I-PAK 2 1 3 HFD5N60U 1 2 3 HFU5N60U 1.Gate 2. Drain 3. Source Absolute Maximum Ratings TC=25୅ unless otherwise specified Symbol.

HFD5N60U n-channel mosfet by SemiHow - Datasheet Preview

Datasheet Details

Part number	HFD5N60U
Manufacturer	SemiHow
File Size	414.37 KB
Description	N-Channel MOSFET
Datasheet	HFD5N60U Datasheet

Full PDF Text Transcription for HFD5N60U (Reference)

Note: Below is a high-fidelity text extraction (approx. 800 characters) for HFD5N60U. For precise diagrams, and layout, please refer to the original PDF.

HFD5N60U_HFU5N60U HFD5N60U / HFU5N60U 600V N-Channel MOSFET FEATURES Originative New Design Superior Avalanche Rugged Technology Robust Gate Oxide Technology Very...

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rior Avalanche Rugged Technology Robust Gate Oxide Technology Very Low Intrinsic Capacitances Excellent Switching Characteristics Unrivalled Gate Charge : 10.5 nC (Typ.) Extended Safe Operating Area Lower RDS(ON) : 2.0 ȍ 7S #9GS=10V 100% Avalanche Tested Jan 2014 BVDSS = 600 V RDS(on) typ = 2.0 ȍ ID = 3.6 A D-PAK I-PAK 2 1 3 HFD5N60U 1 2 3 HFU5N60U 1.Gate 2. Drain 3.

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