Full PDF Text Transcription for HFD5N60F (Reference)
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HFD5N60F. For precise diagrams, and layout, please refer to the original PDF.
HFD5N60F_HFU5N60F HFD5N60F / HFU5N60F 600V N-Channel MOSFET FEATURES Originative New Design Superior Avalanche Rugged Technology Robust Gate Oxide Technology Very...
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rior Avalanche Rugged Technology Robust Gate Oxide Technology Very Low Intrinsic Capacitances Excellent Switching Characteristics Unrivalled Gate Charge : 12.5 nC (Typ.) Extended Safe Operating Area Lower RDS(ON) ȍ 7S #9GS=10V 100% Avalanche Tested Dec 2015 BVDSS = 600 V RDS(on) typ ȍ ID = 5 A D-PAK I-PAK 2 1 3 HFD5N60F 1 2 3 HFU5N60F 1.Gate 2. Drain 3.