Full PDF Text Transcription for HFD5N40 (Reference)
Note: Below is a high-fidelity text extraction (approx. 800 characters) for
HFD5N40. For precise diagrams, and layout, please refer to the original PDF.
HFD5N40_HFU5N40 July 2005 HFD5N40 / HFU5N40 400V N-Channel MOSFET BVDSS = 400 V RDS(on) typ ȍ ID = 3.4 A FEATURES Originative New Design Superior Avalanche Rug...
View more extracted text
ID = 3.4 A FEATURES Originative New Design Superior Avalanche Rugged Technology Robust Gate Oxide Technology Very Low Intrinsic Capacitances Excellent Switching Characteristics Unrivalled Gate Charge : 13 nC (Typ.) Extended Safe Operating Area Lower RDS(ON) ȍ 7S #9GS=10V 100% Avalanche Tested D-PAK I-PAK 2 1 3 HFD5N40 1 2 3 HFU5N40 1.Gate 2. Drain 3.
HFD5N40 Datasheet
