Full PDF Text Transcription for HFD5N65S (Reference)
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HFD5N65S. For precise diagrams, and layout, please refer to the original PDF.
HFD5N65S_HFU5N65S Mar 2010 HFD5N65S / HFU5N65S 650V N-Channel MOSFET BVDSS = 650 V RDS(on) typ = 2.3 ȍ ID = 4.0 A FEATURES Originative New Design Superior Avalanche R...
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ȍ ID = 4.0 A FEATURES Originative New Design Superior Avalanche Rugged Technology Robust Gate Oxide Technology Very Low Intrinsic Capacitances Excellent Switching Characteristics Unrivalled Gate Charge : 10.5 nC (Typ.) Extended Safe Operating Area Lower RDS(ON) : 2.3 ȍ (Typ.) @VGS=10V 100% Avalanche Tested D-PAK I-PAK 2 1 3 HFD5N65S 1 2 3 HFU5N65S 1.Gate 2. Drain 3.
HFD5N65S Datasheet
