HFH9N90 - N-Channel MOSFET

SemiHow

Key Features

 Originative New Design  Superior Avalanche Rugged Technology  Robust Gate Oxide Technology  Very Low Intrinsic Capacitances  Excellent Switching Characteristics  Unrivalled Gate Charge : 55 nC (Typ. )  Extended Safe Operating Area  Lower RDS(ON) : 1.12 Ω (Typ. ) @VGS=10V  100% Avalanche Tested TO-3P 1 2 3 1.Gate 2. Drain 3. Source Absolute Maximum Ratings TC=25℃ unless otherwise specified Symbol Parameter Value VDSS ID IDM VGS EAS IAR EAR dv/dt Drain-Source Voltage Drain Current.

HFH9N90 n-channel mosfet by SemiHow - Datasheet Preview

Datasheet Details

Part number	HFH9N90
Manufacturer	SemiHow
File Size	1.12 MB
Description	N-Channel MOSFET
Datasheet	HFH9N90 Datasheet

Full PDF Text Transcription for HFH9N90 (Reference)

Note: Below is a high-fidelity text extraction (approx. 800 characters) for HFH9N90. For precise diagrams, and layout, please refer to the original PDF.

HFH9N90 Apr 2009 HFH9N90 900V N-Channel MOSFET BVDSS = 900 V RDS(on) typ = 1.12 Ω ID = 9.0 A FEATURES  Originative New Design  Superior Avalanche Rugged Technology  Ro...

View more extracted text

S  Originative New Design  Superior Avalanche Rugged Technology  Robust Gate Oxide Technology  Very Low Intrinsic Capacitances  Excellent Switching Characteristics  Unrivalled Gate Charge : 55 nC (Typ.)  Extended Safe Operating Area  Lower RDS(ON) : 1.12 Ω (Typ.) @VGS=10V  100% Avalanche Tested TO-3P 1 2 3 1.Gate 2. Drain 3.

📁 Similar Datasheet

Brand Logo	Part Number	Description	Manufacturer
	HFH9N90	N-Channel Enhancement Mode Field Effect Transistor	HUASHAN ELECTRONIC

More Datasheets from SemiHow

Part Number	Description
HFH10N80	N-Channel MOSFET
HFH10N90Z	N-Channel MOSFET
HFH11N90	N-Channel MOSFET
HFH13N80	N-Channel MOSFET
HFH18N50S	N-Channel MOSFET
HFH19N60	N-Channel MOSFET
HFH6N90	N-Channel MOSFET
HFH7N80	N-Channel MOSFET