HFP12N65S - N-Channel MOSFET

SemiHow

Key Features

Originative New Design Superior Avalanche Rugged Technology Robust Gate Oxide Technology Very Low Intrinsic Capacitances Excellent Switching Characteristics Unrivalled Gate Charge : 38 nC (Typ. ) Extended Safe Operating Area Lower RDS(ON) : 0.67 ȍ (Typ. ) @VGS=10V 100% Avalanche Tested TO-220 1 23 1.Gate 2. Drain 3. Source Absolute Maximum Ratings TC=25୅ unless otherwise specified Symbol Parameter Value VDSS ID IDM VGS EAS IAR EAR dv/dt Drain-Source Voltage Drain Current.

HFP12N65S n-channel mosfet by SemiHow - Datasheet Preview

Datasheet Details

Part number	HFP12N65S
Manufacturer	SemiHow
File Size	247.81 KB
Description	N-Channel MOSFET
Datasheet	HFP12N65S Datasheet

Full PDF Text Transcription for HFP12N65S (Reference)

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HFP12N65S Aug 2009 HFP12N65S 650V N-Channel MOSFET BVDSS = 650 V RDS(on) typ = 0.67 ȍ ID = 12 A FEATURES Originative New Design Superior Avalanche Rugged Technology ...

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URES Originative New Design Superior Avalanche Rugged Technology Robust Gate Oxide Technology Very Low Intrinsic Capacitances Excellent Switching Characteristics Unrivalled Gate Charge : 38 nC (Typ.) Extended Safe Operating Area Lower RDS(ON) : 0.67 ȍ (Typ.) @VGS=10V 100% Avalanche Tested TO-220 1 23 1.Gate 2. Drain 3.

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