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HFP2N60S - N-Channel MOSFET

Key Features

  • Originative New Design.
  • Superior Avalanche Rugged Technology.
  • Robust Gate Oxide Technology.
  • Very Low Intrinsic Capacitances.
  • Excellent Switching Characteristics.
  • Unrivalled Gate Charge : 6.0 nC (Typ. ).
  • Extended Safe Operating Area.
  • Lower RDS(ON) ȍ 7S #9GS=10V.
  • 100% Avalanche Tested TO-220 1 2 3 1.Gate 2. Drain 3. Source Absolute Maximum Ratings TC=25୅ unless otherwise specified Symbol Parameter Value VDSS ID IDM VGS EAS IAR EAR dv/dt.

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Datasheet Details

Part number HFP2N60S
Manufacturer SemiHow
File Size 174.26 KB
Description N-Channel MOSFET
Datasheet download datasheet HFP2N60S Datasheet

Full PDF Text Transcription for HFP2N60S (Reference)

Note: Below is a high-fidelity text extraction (approx. 800 characters) for HFP2N60S. For precise diagrams, and layout, please refer to the original PDF.

HFP2N60S March 2014 HFP2N60S 600V N-Channel MOSFET BVDSS = 600 V RDS(on) typ ȍ ID = 2.0 A FEATURES ƒ Originative New Design ƒ Superior Avalanche Rugged Technology ƒ...

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URES ƒ Originative New Design ƒ Superior Avalanche Rugged Technology ƒ Robust Gate Oxide Technology ƒ Very Low Intrinsic Capacitances ƒ Excellent Switching Characteristics ƒ Unrivalled Gate Charge : 6.0 nC (Typ.) ƒ Extended Safe Operating Area ƒ Lower RDS(ON) ȍ 7S #9GS=10V ƒ 100% Avalanche Tested TO-220 1 2 3 1.Gate 2. Drain 3.

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