HFP2N60 - N-Channel MOSFET

SemiHow

Key Features

Originative New Design Superior Avalanche Rugged Technology Robust Gate Oxide Technology Very Low Intrinsic Capacitances Excellent Switching Characteristics Unrivalled Gate Charge : 9.0 nC (Typ. ) Extended Safe Operating Area Lower RDS(ON) ȍ7S#9GS=10V 100% Avalanche Tested TO-220 1 2 3 1.Gate 2. Drain 3. Source Absolute Maximum Ratings TC=25୅ unless otherwise specified Symbol Parameter Value VDSS ID IDM VGS EAS IAR EAR dv/dt Drain-Source Voltage Drain Current.

HFP2N60 n-channel mosfet by SemiHow - Datasheet Preview

Datasheet Details

Part number	HFP2N60
Manufacturer	SemiHow
File Size	174.11 KB
Description	N-Channel MOSFET
Datasheet	HFP2N60 Datasheet

Full PDF Text Transcription for HFP2N60 (Reference)

Note: Below is a high-fidelity text extraction (approx. 800 characters) for HFP2N60. For precise diagrams, and layout, please refer to the original PDF.

HFP2N60 June 2005 HFP2N60 600V N-Channel MOSFET BVDSS = 600 V RDS(on) typ ȍ ID = 2.0 A FEATURES Originative New Design Superior Avalanche Rugged Technology Ro...

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S Originative New Design Superior Avalanche Rugged Technology Robust Gate Oxide Technology Very Low Intrinsic Capacitances Excellent Switching Characteristics Unrivalled Gate Charge : 9.0 nC (Typ.) Extended Safe Operating Area Lower RDS(ON) ȍ 7S #9GS=10V 100% Avalanche Tested TO-220 1 2 3 1.Gate 2. Drain 3.

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