Datasheet Summary
650V N-Channel MOSFET
Features
Originative New Design Superior Avalanche Rugged Technology Robust Gate Oxide Technology Very Low Intrinsic Capacitances Excellent Switching Characteristics Unrivalled Gate Charge : 5.5 nC (Typ.) Extended Safe Operating Area Lower RDS(ON) : 5 ȍ7S#9GS=10V 100% Avalanche Tested
Nov 2013
BVDSS = 650 V RDS(on) typ = 5 ȍ ID = 2 A
TO-220
1 23
1.Gate 2. Drain 3....