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HFP2N65S - N-Channel MOSFET

Key Features

  •  Originative New Design  Superior Avalanche Rugged Technology  Robust Gate Oxide Technology  Very Low Intrinsic Capacitances  Excellent Switching Characteristics  Unrivalled Gate Charge : 6.0 nC (Typ. )  Extended Safe Operating Area  Lower RDS(ON) : 5.0 Ω (Typ. ) @VGS=10V  100% Avalanche Tested TO-220 1 2 3 1.Gate 2. Drain 3. Source Absolute Maximum Ratings TC=25℃ unless otherwise specified Symbol Parameter Value VDSS ID IDM VGS EAS IAR EAR dv/dt Drain-Source Voltage Drain Current.

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Datasheet Details

Part number HFP2N65S
Manufacturer SemiHow
File Size 745.23 KB
Description N-Channel MOSFET
Datasheet download datasheet HFP2N65S Datasheet

Full PDF Text Transcription for HFP2N65S (Reference)

Note: Below is a high-fidelity text extraction (approx. 800 characters) for HFP2N65S. For precise diagrams, and layout, please refer to the original PDF.

HFP2N65S Sep 2009 HFP2N65S 650V N-Channel MOSFET BVDSS = 650 V RDS(on) typ = 5.0 Ω ID = 1.8 A FEATURES  Originative New Design  Superior Avalanche Rugged Technology  R...

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ES  Originative New Design  Superior Avalanche Rugged Technology  Robust Gate Oxide Technology  Very Low Intrinsic Capacitances  Excellent Switching Characteristics  Unrivalled Gate Charge : 6.0 nC (Typ.)  Extended Safe Operating Area  Lower RDS(ON) : 5.0 Ω (Typ.) @VGS=10V  100% Avalanche Tested TO-220 1 2 3 1.Gate 2. Drain 3.

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