Datasheet Summary
July 2007
650V N-Channel MOSFET
BVDSS = 650 V RDS(on) typ = 4.5 Ω ID = 1.8 A
Features
Originative New Design Superior Avalanche Rugged Technology Robust Gate Oxide Technology Very Low Intrinsic Capacitances Excellent Switching Characteristics Unrivalled Gate Charge : 9.0 nC (Typ.) Extended Safe Operating Area Lower RDS(ON) : 4.5 Ω (Typ.) @VGS=10V 100% Avalanche Tested
TO-220
1 2 3
1.Gate 2. Drain 3....