HFP730F - N-Channel MOSFET

SemiHow

Key Features

Originative New Design Very Low Intrinsic Capacitances Excellent Switching Characteristics 100% Avalanche Tested RoHS Compliant HFP730F TO-220 Key Parameters Parameter BVDSS ID RDS(on), Typ Qg, Typ Value 400 6 0.8 13 HFS730F TO-220F Symbol Unit V A ȍ nC S D G S D G Absolute Maximum Ratings TC=25୅ unless otherwise specified Symbol Parameter TO-220 TO-220F VDSS ID IDM VGS EAS IAR EAR dv/dt Drain-Source Voltage Drain Current Drain Current Drain Current.
Continuous.

HFP730F n-channel mosfet by SemiHow - Datasheet Preview

Datasheet Details

Part number	HFP730F
Manufacturer	SemiHow
File Size	261.00 KB
Description	N-Channel MOSFET
Datasheet	HFP730F Datasheet

📁 Similar Datasheet

Part Number	Description	Manufacturer
HFP730	N-Channel Enhancement Mode Field Effect Transistor	Shantou Huashan Electronic
HFP70N03V	N-Channel Enhancement Mode Field Effect Transistor	HUASHAN ELECTRONIC
HFP70N06	N-Channel Enhancement Mode Field Effect Transistor	HUASHAN ELECTRONIC
HFP740	N-Channel Enhancement Mode Field Effect Transistor	Shantou Huashan Electronic
HFP75N08	N-Channel MOSFET	Shantou Huashan Electronic

Other Datasheets by SemiHow

Part Number	Description
HFP730	400V N-Channel MOSFET
HFP730S	N-Channel MOSFET
HFP730U	N-Channel MOSFET
HFP740	N-Channel MOSFET
HFP75N75	75V N-Channel MOSFET

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text

HFP730F_HFS730F Dec 2016 HFP730F / HFS730F 400V N-Channel MOSFET Features Originative New Design Very Low Intrinsic Capacitances Excellent Switching Characteristics 100% Avalanche Tested RoHS Compliant HFP730F TO-220 Key Parameters Parameter BVDSS ID RDS(on), Typ Qg, Typ Value 400 6 0.