HFP8N65S - N-Channel MOSFET

SemiHow

Key Features

Originative New Design Superior Avalanche Rugged Technology Robust Gate Oxide Technology Very Low Intrinsic Capacitances Excellent Switching Characteristics Unrivalled Gate Charge : 22 nC (Typ. ) Extended Safe Operating Area Lower RDS(ON) ȍ7S#9GS=10V 100% Avalanche Tested TO-220 1 2 3 1.Gate 2. Drain 3. Source Absolute Maximum Ratings TC=25୅ unless otherwise specified Symbol Parameter Value VDSS ID IDM VGS EAS IAR EAR dv/dt Drain-Source Voltage Drain Current.

HFP8N65S n-channel mosfet by SemiHow - Datasheet Preview

Datasheet Details

Part number	HFP8N65S
Manufacturer	SemiHow
File Size	194.49 KB
Description	N-Channel MOSFET
Datasheet	HFP8N65S Datasheet

Full PDF Text Transcription for HFP8N65S (Reference)

Note: Below is a high-fidelity text extraction (approx. 800 characters) for HFP8N65S. For precise diagrams, and layout, please refer to the original PDF.

HFP8N65S Sep 2009 HFP8N65S 650V N-Channel MOSFET BVDSS = 650 V RDS(on) typ ȍ ID = 7.2 A FEATURES Originative New Design Superior Avalanche Rugged Technology ...

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RES Originative New Design Superior Avalanche Rugged Technology Robust Gate Oxide Technology Very Low Intrinsic Capacitances Excellent Switching Characteristics Unrivalled Gate Charge : 22 nC (Typ.) Extended Safe Operating Area Lower RDS(ON) ȍ 7S #9GS=10V 100% Avalanche Tested TO-220 1 2 3 1.Gate 2. Drain 3.

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