Full PDF Text Transcription for HFP8N65U (Reference)
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HFP8N65U. For precise diagrams, and layout, please refer to the original PDF.
HFP8N65U HFP8N65U 650V N-Channel MOSFET FEATURES Originative New Design Superior Avalanche Rugged Technology Robust Gate Oxide Technology Very Low Intrinsic Capac...
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d Technology Robust Gate Oxide Technology Very Low Intrinsic Capacitances Excellent Switching Characteristics Unrivalled Gate Charge : 22.0 nC (Typ.) Extended Safe Operating Area Lower RDS(ON) ȍ 7S #9GS=10V 100% Avalanche Tested March 2013 BVDSS = 650 V RDS(on) typ ȍ ID = 7.5 A TO-220 1 23 1.Gate 2. Drain 3.
HFP8N65U Datasheet
