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HFS18N50U
HFS18N50U
500V N-Channel MOSFET
FEATURES
Originative New Design Superior Avalanche Rugged Technology Robust Gate Oxide Technology Very Low Intrinsic Capacitances Excellent Switching Characteristics Unrivalled Gate Charge : 58 nC (Typ.) Extended Safe Operating Area Lower RDS(ON) ȍ7S#9GS=10V 100% Avalanche Tested
Apr 2014
BVDSS = 500 V RDS(on) typ = 0.22 ȍ ID = 18 A
TO-220F
12 3
1.Gate 2. Drain 3.