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HFS35N75
Dec 2008
HFS35N75
75V N-Channel MOSFET
BVDSS = 75 V RDS(on) typ Pȍ ID = 35 A
FEATURES
Originative New Design Superior Avalanche Rugged Technology Robust Gate Oxide Technology Very Low Intrinsic Capacitances Excellent Switching Characteristics Unrivalled Gate Charge : 40 nC (Typ.) Extended Safe Operating Area Lower RDS(ON) ȍ7S#9GS=10V 100% Avalanche Tested
TO-220F
12 3
1.Gate 2. Drain 3.