Datasheet4U Logo Datasheet4U.com

HFS3N80 - 800V N-Channel MOSFET

Key Features

  • ‰ ‰ ‰ ‰ ‰ ‰ ‰ ‰ ‰ Originative New Design Superior Avalanche Rugged Technology Robust Gate Oxide Technology Very Low Intrinsic Capacitances Excellent Switching Characteristics Unrivalled Gate Charge : 17 nC (Typ (Typ. ) ) Extended Safe Operating Area Lower RDS(ON) : 4.0 Ω (Typ. ) @VGS=10V 100% Avalanche Tested TC=25℃ unless otherwise specified RDS(on) typ = 4.0 Ω ID = 3.0 A TO-220F 11 2 3 1.Gate 2. Drain 3. Source Absolute Maximum Ratings Symbol VDSS ID IDM VGS EAS IAR EAR dv/dt PD TJ, TSTG TL.

📥 Download Datasheet

Datasheet Details

Part number HFS3N80
Manufacturer SEMIHOW
File Size 667.13 KB
Description 800V N-Channel MOSFET
Datasheet download datasheet HFS3N80 Datasheet

📁 Similar Datasheet

Part Number Description Manufacturer
HFS33 Solid State Relay ETC
HFS34 SOLID STATE RELAY HF
HFS15 SOLID STATE RELAY HF
HFS2 MOS RELAY HF
HFS20 SOLID STATE RELAY HF

Other Datasheets by SEMIHOW

Part Number Description
HFS3N90 N-Channel MOSFET
HFS35N75 75V N-Channel MOSFET
HFS10N60S N-Channel MOSFET
HFS10N60U N-Channel MOSFET
HFS10N65S N-Channel MOSFET

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
HFS3N80 Dec 2005 BVDSS = 800 V HFS3N80 800V N-Channel MOSFET FEATURES ‰ ‰ ‰ ‰ ‰ ‰ ‰ ‰ ‰ Originative New Design Superior Avalanche Rugged Technology Robust Gate Oxide Technology Very Low Intrinsic Capacitances Excellent Switching Characteristics Unrivalled Gate Charge : 17 nC (Typ (Typ.) ) Extended Safe Operating Area Lower RDS(ON) : 4.0 Ω (Typ.) @VGS=10V 100% Avalanche Tested TC=25℃ unless otherwise specified RDS(on) typ = 4.0 Ω ID = 3.0 A TO-220F 11 2 3 1.Gate 2. Drain 3.