HFS3N80 - 800V N-Channel MOSFET

Product Overview

SEMIHOW

Part number	HFS3N80
Manufacturer	SEMIHOW
File Size	667.13 KB
Description	800V N-Channel MOSFET
Datasheet	HFS3N80 Datasheet
Additional preview pages of the HFS3N80 datasheet.

Originative New Design Superior Avalanche Rugged Technology Robust Gate Oxide Technology Very Low Intrinsic Capacitances Excellent Switching Characteristics Unrivalled Gate Charge : 17 nC (Typ (Typ. ) ) Extended Safe Operating Area Lower RDS(ON) : 4.0 Ω (Typ. ) @VGS=10V 100% Avalanche Tested TC=25℃ unless otherwise specified RDS(on) typ = 4.0 Ω ID = 3.0 A TO-220F 11 2 3 1.Gate 2. Drain 3. Source Absolute Maximum Ratings Symbol VDSS ID IDM VGS EAS IAR EAR dv/dt PD TJ, TSTG TL.

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Published: May 9, 2014 |