HFS640 - 200V N-Channel MOSFET

SemiHow

Key Features

Originative New Design Superior Avalanche Rugged Technology Robust Gate Oxide Technology Very Low Intrinsic Capacitances Excellent Switching Characteristics Unrivalled Gate Charge : 37 nC (Typ. ) Extended Safe Operating Area Lower RDS(ON) ȍ7S#9GS=10V 100% Avalanche Tested TO-220F 12 3 1.Gate 2. Drain 3. Source D G S Absolute Maximum Ratings TC=25୅ unless otherwise specified Symbol Parameter Value VDSS ID IDM VGS EAS IAR EAR dv/dt Drain-Source Voltage Drain.

HFS640 200v n-channel mosfet by SemiHow - Datasheet Preview

Datasheet Details

Part number	HFS640
Manufacturer	SemiHow
File Size	185.12 KB
Description	200V N-Channel MOSFET
Datasheet	HFS640 Datasheet

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HFS640 Nov 2005 HFS640 200V N-Channel MOSFET BVDSS = 200 V RDS(on) typ ȍ ID = 18* A FEATURES Originative New Design Superior Avalanche Rugged Technology Robust Gate Oxide Technology Very Low Intrinsic Capacitances Excellent Switching Characteristics Unrivalled Gate Charge : 37 nC (Typ.) Extended Safe Operating Area Lower RDS(ON) ȍ7S#9GS=10V 100% Avalanche Tested TO-220F 12 3 1.Gate 2. Drain 3.