HFS640 - 200V N-Channel MOSFET

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SemiHow

Part number	HFS640
Manufacturer	SemiHow
File Size	185.12 KB
Description	200V N-Channel MOSFET
Datasheet	HFS640 Datasheet
Additional preview pages of the HFS640 datasheet.

Originative New Design Superior Avalanche Rugged Technology Robust Gate Oxide Technology Very Low Intrinsic Capacitances Excellent Switching Characteristics Unrivalled Gate Charge : 37 nC (Typ. ) Extended Safe Operating Area Lower RDS(ON) ȍ7S#9GS=10V 100% Avalanche Tested TO-220F 12 3 1.Gate 2. Drain 3. Source D G S Absolute Maximum Ratings TC=25୅ unless otherwise specified Symbol Parameter Value VDSS ID IDM VGS EAS IAR EAR dv/dt Drain-Source Voltage Drain.

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Published: Jun 7, 2015 |