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HFP640A_HFS640A
Oct 2016
HFP640A / HFS640A
200V N-Channel MOSFET
Features
Superior Avalanche Rugged Technology Robust Gate Oxide Technology Very Low Intrinsic Capacitances Excellent Switching Characteristics 100% Avalanche Tested RoHS Compliant
Key Parameters
Parameter BVDSS ID
RDS(on), Typ Qg, Typ
Value 200 18 0.