Full PDF Text Transcription for HFU5N60S (Reference)
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HFU5N60S. For precise diagrams, and layout, please refer to the original PDF.
HFD5N60S_HFU5N60S Sep 2009 HFD5N60S / HFU5N60S 600V N-Channel MOSFET BVDSS = 600 V RDS(on) typ = 2.0 ȍ ID = 4.3 A FEATURES Originative New Design Superior Avalanche R...
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ȍ ID = 4.3 A FEATURES Originative New Design Superior Avalanche Rugged Technology Robust Gate Oxide Technology Very Low Intrinsic Capacitances Excellent Switching Characteristics Unrivalled Gate Charge : 10.5 nC (Typ.) Extended Safe Operating Area Lower RDS(ON) : 2.0 ȍ (Typ.) @VGS=10V 100% Avalanche Tested D-PAK I-PAK 2 1 3 HFD5N60S 1 2 3 HFU5N60S 1.Gate 2. Drain 3.
HFU5N60S Datasheet
