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HFU5N40 - 400V N-Channel MOSFET

Key Features

  • ‰ Originative New Design ‰ Superior Avalanche Rugged Technology ‰ Robust Gate Oxide Technology ‰ Very Low Intrinsic Capacitances ‰ Excellent Switching Characteristics ‰ Unrivalled Gate Charge : 13 nC (Typ. ) ‰ Extended Safe Operating Area ‰ Lower RDS(ON) ȍ 7S #9GS=10V ‰ 100% Avalanche Tested D-PAK I-PAK 2 1 3 HFD5N40 1 2 3 HFU5N40 1.Gate 2. Drain 3. Source Absolute Maximum Ratings TC=25୅ unless otherwise specified Symbol Parameter Value VDSS ID IDM VGS EAS IAR EAR dv/dt Drain.

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Datasheet Details

Part number HFU5N40
Manufacturer SemiHow
File Size 203.76 KB
Description 400V N-Channel MOSFET
Datasheet download datasheet HFU5N40 Datasheet

Full PDF Text Transcription for HFU5N40 (Reference)

Note: Below is a high-fidelity text extraction (approx. 800 characters) for HFU5N40. For precise diagrams, and layout, please refer to the original PDF.

HFD5N40_HFU5N40 July 2005 HFD5N40 / HFU5N40 400V N-Channel MOSFET BVDSS = 400 V RDS(on) typ ȍ ID = 3.4 A FEATURES ‰ Originative New Design ‰ Superior Avalanche Rug...

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ID = 3.4 A FEATURES ‰ Originative New Design ‰ Superior Avalanche Rugged Technology ‰ Robust Gate Oxide Technology ‰ Very Low Intrinsic Capacitances ‰ Excellent Switching Characteristics ‰ Unrivalled Gate Charge : 13 nC (Typ.) ‰ Extended Safe Operating Area ‰ Lower RDS(ON) ȍ 7S #9GS=10V ‰ 100% Avalanche Tested D-PAK I-PAK 2 1 3 HFD5N40 1 2 3 HFU5N40 1.Gate 2. Drain 3.