HFW50N06 - 60V N-Channel MOSFET

Product Overview

SemiHow

Part number	HFW50N06
Manufacturer	SemiHow
File Size	238.49 KB
Description	60V N-Channel MOSFET
Datasheet	HFW50N06 Datasheet
Additional preview pages of the HFW50N06 datasheet.

Originative New Design Superior Avalanche Rugged Technology Robust Gate Oxide Technology Very Low Intrinsic Capacitances Excellent Switching Characteristics Unrivalled Gate Charge : 40 nC (Typ. ) Extended Safe Operating Area Lower RDS(ON) : 0.018 Ω (Typ. ) @VGS=10V 100% Avalanche Tested D2-PAK I2-PAK HFW50N06 HFI50N06 1.Gate 2. Drain 3. Source Absolute Maximum Ratings TC=25୅ unless otherwise specified Symbol Parameter Value VDSS ID IDM VGS EAS IAR EAR dv/dt Drain-Source Vo.

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Published: Jun 7, 2015 |