HFW50N06A - N-Channel MOSFET

SemiHow

Key Features

Originative New Design Superior Avalanche Rugged Technology Robust Gate Oxide Technology Very Low Intrinsic Capacitances Excellent Switching Characteristics Unrivalled Gate Charge : 27 nC (Typ. ) Extended Safe Operating Area Lower RDS(ON) : ȍ(Typ. ) @VGS=10V 100% Avalanche Tested BVDSS = 60 V RDS(on) typ = 18 Pȍ ID = 50 A D2-PAK 2 1 3 1.Gate 2. Drain 3. Source Absolute Maximum Ratings TC=25୅ unless otherwise specified Symbol Parameter Value VDSS ID IDM VGS EAS IAR.

HFW50N06A n-channel mosfet by SemiHow - Datasheet Preview

Datasheet Details

Part number	HFW50N06A
Manufacturer	SemiHow
File Size	364.40 KB
Description	N-Channel MOSFET
Datasheet	HFW50N06A Datasheet

Full PDF Text Transcription for HFW50N06A (Reference)

Note: Below is a high-fidelity text extraction (approx. 800 characters) for HFW50N06A. For precise diagrams, and layout, please refer to the original PDF.

HFW50N06A Oct 2015 HFW50N06A 60V N-Channel MOSFET FEATURES Originative New Design Superior Avalanche Rugged Technology Robust Gate Oxide Technology Very Low Intri...

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nche Rugged Technology Robust Gate Oxide Technology Very Low Intrinsic Capacitances Excellent Switching Characteristics Unrivalled Gate Charge : 27 nC (Typ.) Extended Safe Operating Area Lower RDS(ON) : ȍ(Typ.) @VGS=10V 100% Avalanche Tested BVDSS = 60 V RDS(on) typ = 18 Pȍ ID = 50 A D2-PAK 2 1 3 1.Gate 2. Drain 3.

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