HFW50N06A - N-Channel MOSFET

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SemiHow

Part number	HFW50N06A
Manufacturer	SemiHow
File Size	364.40 KB
Description	N-Channel MOSFET
Datasheet	HFW50N06A Datasheet
Additional preview pages of the HFW50N06A datasheet.

Originative New Design Superior Avalanche Rugged Technology Robust Gate Oxide Technology Very Low Intrinsic Capacitances Excellent Switching Characteristics Unrivalled Gate Charge : 27 nC (Typ. ) Extended Safe Operating Area Lower RDS(ON) : ȍ(Typ. ) @VGS=10V 100% Avalanche Tested BVDSS = 60 V RDS(on) typ = 18 Pȍ ID = 50 A D2-PAK 2 1 3 1.Gate 2. Drain 3. Source Absolute Maximum Ratings TC=25୅ unless otherwise specified Symbol Parameter Value VDSS ID IDM VGS EAS IAR.

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Published: Jun 27, 2016 |