HRLF80N06K - N-Channel MOSFET

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Datasheet Details

HRLF80N06K Jan 2016 HRLF80N06K 60V N-Channel Trench MOSFET.

BVDSS = 60 V ID = 70 A Unrivalled Gate Charge : 100 nC (Typ. ) Lower RDS(ON) : 6.3 Pȍ (Typ. ) @VGS=10V Lower RDS(ON) : 7.5 Pȍ (Typ. ) @VGS=4.5V 100% Avalanche Tested 8DFN 5x6 1 Absolute Maximum Ratings TJ=25୅ unless otherwise specified Symbol Parameter Value VDSS VGS ID IDM EAS PD TJ, TSTG Drain-Source Voltage Gate-Source Voltage Drain Current Pulsed Drain Current TC = 25୅ TC = 100୅ (Note 1) Single Pulsed Avalanche Energy (Note 2) Power Dissipation TC= 25୅ TA = 25୅ Operat.