SM13N50C - 500V N-Channel MOSFET

Key Features

Low Intrinsic Capacitances.
Excellent Switching Characteristics.
Extended Safe Operating Area.
Unrivalled Gate Charge :Qg= 42nC (Typ. ).
BVDSS=500V,ID=13A.
RDS(on) :0.5 Ω (Max) @VG=10V.
100% Avalanche Tested 1.Gate (G) 2.Drain (D) 3.Source (S) Absolute Maximum Ratings (Ta=25℃ unless otherwise noted) Symbol VDSS ID VGS(TH) EAS IAR PD Tj Tstg TL Parameter Drain-Source Voltage Drain Current Gate Threshold Voltage Tj=25℃ Tj=100℃.

SM13N50C 500v n-channel mosfet by SemiMOS - Datasheet Preview

Datasheet Details

Part number	SM13N50C
Manufacturer	SemiMOS
File Size	1.11 MB
Description	500V N-Channel MOSFET
Datasheet	SM13N50C Datasheet

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SM13N50C 500V N-Channel MOSFET TO-220 SM13N50C KONGSON Features: □ Low Intrinsic Capacitances □ Excellent Switching Characteristics □ Extended Safe Operating Area □ Unrivalled Gate Charge :Qg= 42nC (Typ.) □ BVDSS=500V,ID=13A □ RDS(on) :0.5 Ω (Max) @VG=10V □ 100% Avalanche Tested 1.Gate (G) 2.Drain (D) 3.Source (S) Absolute Maximum Ratings (Ta=25℃ unless otherwise noted) Symbol VDSS ID VGS(TH) EAS IAR PD Tj Tstg TL Parameter Drain-Source Voltage Drain Current Gate Threshold Voltage Tj=25℃ Tj=100℃ Single Pulse Avalanche Energy (note1) Avalanche Current (note2) Power Dissipation (Tj=25℃) Junction Temperature(Max) Storage Temperature Maximum lead temperature for soldering purpose,1/8” from case for 5 seconds Value 500 13 7.