SM5N60S-D
SM5N60S-D is 600V N-Channel MOSFET manufactured by SemiMOS.
- Part of the SM5N60S-I comparator family.
- Part of the SM5N60S-I comparator family.
Features
:
- Low Intrinsic Capacitances.
- Excellent Switching Characteristics.
- Extended Safe Operating Area.
- Unrivalled Gate Charge :Qg=13.3n C (Typ.).
- BVDSS=600V,ID=5A
- RDS(on) : 2.3 Ω (Max) @VG=10V
- 100% Avalanche Tested
TO‐251
TO‐252
1.Gate (G) 2.Drain (D) 3.Source (S)
Absolute Maximum Ratings (Ta=25℃ unless otherwise noted)
Symbol VDSS
VGS(TH) EAS IAR PD Tj Tstg TL
Parameter
Drain-Source Voltage Drain Current Gate Threshold Voltage
Tj=25℃ Tj=100℃
Single Pulse Avalanche Energy (note1)
Avalanche Current (note2) Power Dissipation (Tj=25℃)
Junction Temperature(Max)
Storage Temperature Maximum lead temperature for soldering purpose,1/8” from case for 5 seconds
Value 600
5 2.5 ±30 128 4 50 150 -55~+150 300
Unit V
V m J A W ℃ ℃ ℃
Thermal Characteristics
Symbol
Parameter
Typ.
Max.
Unit
RθJC
Thermal Resistance,Junction to Case
- 2.5
℃/W
RθJA
Thermal Resistance,Junction to...
