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SM5N60S-I/SM5N60S-D
600V N-Channel MOSFET
SM5N60S-I
SM5N60S-D
SM5N60S-I/SM5N60S-D
KONGSON Features:
□ Low Intrinsic Capacitances. □ Excellent Switching Characteristics. □ Extended Safe Operating Area. □ Unrivalled Gate Charge :Qg=13.3nC (Typ.). □ BVDSS=600V,ID=5A □ RDS(on) : 2.3 Ω (Max) @VG=10V □ 100% Avalanche Tested
TO‐251
TO‐252
1.Gate (G) 2.Drain (D) 3.Source (S)
Absolute Maximum Ratings (Ta=25℃ unless otherwise noted)
Symbol VDSS
ID
VGS(TH) EAS IAR PD Tj Tstg TL
Parameter
Drain-Source Voltage Drain Current Gate Threshold Voltage
Tj=25℃ Tj=100℃
Single Pulse Avalanche Energy (note1)
Avalanche Current (note2) Power Dissipation (Tj=25℃)
Junction Temperature(Max)
Storage Temperature Maximum lead temperature for soldering purpose,1/8” from case for 5 seconds
Value 600
5 2.
SM5N60S-D Datasheet
