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SM5N60S-I - 600V N-Channel MOSFET

Key Features

  • Low Intrinsic Capacitances.
  • Excellent Switching Characteristics.
  • Extended Safe Operating Area.
  • Unrivalled Gate Charge :Qg=13.3nC (Typ. ).
  • BVDSS=600V,ID=5A.
  • RDS(on) : 2.3 Ω (Max) @VG=10V.
  • 100% Avalanche Tested TO‐251 TO‐252 1.Gate (G) 2.Drain (D) 3.Source (S) Absolute Maximum Ratings (Ta=25℃ unless otherwise noted) Symbol VDSS ID VGS(TH) EAS IAR PD Tj Tstg TL Parameter Drain-Source Voltage Drain Current Gate Threshold Volt.

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Datasheet Details

Part number SM5N60S-I
Manufacturer SemiMOS
File Size 1.46 MB
Description 600V N-Channel MOSFET
Datasheet download datasheet SM5N60S-I Datasheet

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Other Datasheets by SemiMOS

Part Number Description
SM5N60S-D 600V N-Channel MOSFET
SM5N60S 600V N-Channel MOSFET
SM5N60C 600V N-Channel MOSFET

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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SM5N60S-I/SM5N60S-D 600V N-Channel MOSFET SM5N60S-I SM5N60S-D SM5N60S-I/SM5N60S-D KONGSON Features: □ Low Intrinsic Capacitances. □ Excellent Switching Characteristics. □ Extended Safe Operating Area. □ Unrivalled Gate Charge :Qg=13.3nC (Typ.). □ BVDSS=600V,ID=5A □ RDS(on) : 2.3 Ω (Max) @VG=10V □ 100% Avalanche Tested TO‐251 TO‐252 1.Gate (G) 2.Drain (D) 3.Source (S) Absolute Maximum Ratings (Ta=25℃ unless otherwise noted) Symbol VDSS ID VGS(TH) EAS IAR PD Tj Tstg TL Parameter Drain-Source Voltage Drain Current Gate Threshold Voltage Tj=25℃ Tj=100℃ Single Pulse Avalanche Energy (note1) Avalanche Current (note2) Power Dissipation (Tj=25℃) Junction Temperature(Max) Storage Temperature Maximum lead temperature for soldering purpose,1/8” from case for 5 seconds Value 600 5 2.