SM7N60S - 600V N-Channel MOSFET

Key Features

Low Intrinsic Capacitances.
Excellent Switching Characteristics.
Extended Safe Operating Area.
Unrivalled Gate Charge :Qg=25nC (Typ. ).
BVDSS=600V,ID=7A.
RDS(on) : 1.2Ω (Max) @VG=10V.
100% Avalanche Tested 1.Gate (G) 2.Drain (D) 3.Source (S) Absolute Maximum Ratings (Ta=25℃ unless otherwise noted) Symbol VDSS ID VGS(TH) EAS IAR PD Tj Tstg TL Parameter Drain-Source Voltage Drain Current Gate Threshold Voltage Tj=25℃ Tj=100℃.

SM7N60S 600v n-channel mosfet by SemiMOS - Datasheet Preview

Datasheet Details

Part number	SM7N60S
Manufacturer	SemiMOS
File Size	1.34 MB
Description	600V N-Channel MOSFET
Datasheet	SM7N60S Datasheet

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Full PDF Text Transcription (Reference)

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SM7N60S 600V N-Channel MOSFET TO-220F SM7N60S KONGSON Features: □ Low Intrinsic Capacitances. □ Excellent Switching Characteristics. □ Extended Safe Operating Area. □ Unrivalled Gate Charge :Qg=25nC (Typ.). □ BVDSS=600V,ID=7A □ RDS(on) : 1.2Ω (Max) @VG=10V □ 100% Avalanche Tested 1.Gate (G) 2.Drain (D) 3.Source (S) Absolute Maximum Ratings (Ta=25℃ unless otherwise noted) Symbol VDSS ID VGS(TH) EAS IAR PD Tj Tstg TL Parameter Drain-Source Voltage Drain Current Gate Threshold Voltage Tj=25℃ Tj=100℃ Single Pulse Avalanche Energy (note1) Avalanche Current (note2) Power Dissipation (Tj=25℃) Junction Temperature(Max) Storage Temperature Maximum lead temperature for soldering purpose,1/8” from case for 5 seconds Value 600 7.0 4.7 ±30 400 7.