The following content is an automatically extracted verbatim text
from the original manufacturer datasheet and is provided for reference purposes only.
View original datasheet text
SM840
500V N-Channel MOSFET
TO-252
2
SM840
KONGSON Features □ Low Intrinsic Capacitances
□ Excellent Switching Characteristics □ Extended Safe Operating Area □ Unrivalled Gate Charge : 28 nC (Typ.) □ BVDSS=500V,ID=9A □ Lower RDS(on) : 0.80 Ω (Max) @VG=10V □ 100% Avalanche Tested
1 3
1.Gate (G) 2.Drain (D) 3.Source (S)
Absolute Maximum Ratings (Ta=25℃ unless otherwise noted)
Symbol VDSS
ID
VGS(TH) EAS IAR PD Tj Tstg TL
Parameter
Drain-Source Voltage Drain Current Gate Threshold Voltage
Tj=25℃ Tj=100℃
Single Pulse Avalanche Energy (note1)
Avalanche Current (note2) Power Dissipation (Tj=25℃)
Junction Temperature(Max)
Storage Temperature Maximum lead temperature for soldering purpose,1/8” from case for 5 seconds
Value 500 9.0 5.7 ±30 190 9.
SM840 Datasheet
