SFB60N03L
Overview
This Power MOSFET is produced using SemiWell’s advanced planar stripe, DMOS technology. This latest technology has been especially designed to minimize on-state resistance, have a low gate charge with superior switching performance, and rugged avalanche characteristics.
- Low RDS(on) (0.0135Ω )@VGS=10V Low Gate Charge (Typical 21.5nC) Low Crss (Typical 130pF) Improved dv/dt Capability 100% Avalanche Tested Maximum Junction Temperature Range (175°C) Symbol ◀ { {
- Drain *
- Gate ▲ *
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