SFF4N60
SFF4N60 is N-Channel MOSFET manufactured by SemiWell Semiconductor.
Features
- -
- -
- RDS(on) (Max 2.5 Ω )@VGS=10V Gate Charge (Typical 15n C) Improved dv/dt Capability, High Ruggedness 100% Avalanche Tested Maximum Junction Temperature Range (150°C)
Symbol
◀
{
2. Drain
- 1. Gate {
▲
- -
{
3. Source
General Description
This Power MOSFET is produced using Semiwell’s advanced planar stripe, DMOS technology. This latest technology has been especially designed to minimize on-state resistance, have a high rugged avalanche characteristics. These devices are well suited for high efficiency switch mode power supplies, active power factor correction, electronic lamp ballasts based on half bridge topology.
TO-220F
Absolute Maximum Ratings (- Drain current limited by junction temperature)
Symbol
VDSS ID IDM VGS EAS EAR dv/dt PD TSTG, TJ TL Drain to Source Voltage Continuous Drain Current(@TC = 25°C) Continuous Drain Current(@TC = 100°C) Drain Current Pulsed Gate to Source Voltage Single Pulsed Avalanche Energy Repetitive Avalanche Energy Peak Diode Recovery dv/dt Total Power Dissipation(@TC = 25 °C) Derating Factor above 25 °C Operating Junction Temperature & Storage Temperature Maximum Lead Temperature for soldering purpose, 1/8 from Case for 5 seconds.
(Note 2) (Note 1) (Note 3) (Note 1)
Parameter
Value
600 4.0- 2.5- 16-
Units
V A A A V m J m J V/ns W W/°C °C °C
±30
240 10 4.5 33 0.26
- 55 ~ 150 300
Thermal Characteristics
Symbol
RθJC RθJA
Parameter
Thermal Resistance, Junction-to-Case Thermal Resistance, Junction-to-Ambient
Value Min.
- Typ.
- Max.
3.79...
