SFF7N60 Datasheet | SemiWell Semiconductor

Features - - - - - RDS(on) (Max 1.2 Ω )@VGS=10V Gate Charge (Typical 28n C) Improved dv/dt Capability, High Ruggedness 100% Avalanche Tested Maximum Junction Temperature Range (150°C) Symbol ◀ { 2. Drain - 1. Gate { ▲ - - { 3. Source General Description This Power MOSFET is produced using Semiwell’s advanced planar stripe, DMOS technology. This latest technology has been especially designed to minimize on-state resistance, have a high rugged avalanche characteristics. These devices are well suited for high efficiency switch mode power supplies, active power factor correction, electronic lamp ballasts based on half bridge topology. TO-220F Absolute Maximum Ratings Symbol VDSS ID IDM VGS EAS EAR dv/dt PD TSTG, TJ TL Drain to Source Voltage ( - Drain current limited by junction temperature) Value 600 7.0- 4.4- (Note 1) Parameter Continuous Drain Current(@TC = 25°C) Continuous Drain Current(@TC = 100°C) Drain Current Pulsed Gate to Source Voltage Single Pulsed Avalanche Energy Repetitive Avalanche Energy Peak Diode Recovery dv/dt Total Power Dissipation(@TC = 25 °C) Derating Factor above 25 °C Operating Junction Temperature & Storage Temperature Maximum Lead Temperature for soldering purpose, 1/8 from Case for 5 seconds. (Note 2) (Note 1) (Note 3) Units V A A A V m J m J V/ns W W/°C °C °C 28- ±30 420 14.7 4.5 48 0.38 - 55 ~ 150 300 Thermal Characteristics Symbol RθJC...